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| Datasheet File OCR Text: |
| NTE367 Silicon NPN Transistor RF Power Amplifier PO = 45W @ 512MHz Description: The NTE367 is a silicon NPN RF power transistor in a W65 type package designed for 12.5V UHF large-signal amplifier applications in industrial and commercial FM equipment operating to 512MHz. Features: D Specified 12.5V, 470MHz Characteristics: Output Power: 45W Minimum Gain: 4.8dB Efficiency: 55% D Characterized with Series Equivalent Large-Signal Impedance Parameters D Built-In Matching Network for Broadband Operation D Tested for Load Mismatch Stress at all Phase Angles with 20:1 VSWR @ 16V High Line and 50% Overdrive Absolute Maximum Ratings: Collector-Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16V Collector-Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 36V Emitter-Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4V Continuous Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9A Total Device Dissipation (TC = +25C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 117W Derate Above 25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 670mW/C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -65 to +150C Thermal Resistance, Junction to Case, RJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.5C/W Electrical Characteristics: (TC = +25C unless otherwise specified) Parameter OFF Characteristics Collector-Emitter Breakdown Voltage V(BR)CEO IC = 20mA, IB = 0 V(BR)CES IC = 20mA, VBE= 0 Emitter-Base Breakdown Voltage Collector Cutoff Current V(BR)EBO IE = 5mA, IC - 0 ICES VCE = 15V, VBE = 0, TC = +25C 16 36 4 - - - - - - - - 10 V V V mA Symbol Test Conditions Min Typ Max Unit Electrical Characteristics (Cont'd): (TC = +25C unless otherwise specified) Parameter ON Characteristics DC Current Gain Dynamic Characteristics Output Capacitance Functional Tests Common-Emitter Amplifier Power Gain Collector Efficiency Input Power Load Mismatch Stress Gpe Pin y VCC = 12.5V, PO = 45W, IC(Max) = 5.8A, f = 470MHz VCC = 12.5V, PO = 45W, f = 470MHz VCC = 16V, f = 470MHz, VSWR = 20:1, All Phase Angles, Note 1, Note 2 VCC = 12.5V, PO = 45W, f = 470MHz 4.8 55 - 5.4 60 13 - - 15 dB % W Cob VCB = 12.5V, IE = 0, f = 1MHz - 90 125 pF hFE IC = 4A, VCE = 5V 20 70 150 Symbol Test Conditions Min Typ Max Unit No Degradation in Output Power - - 1.4+j4.0 1.2+j2.8 - - Series Equivalent Input Impedance Series Equivalent Output Impedance Zin ZOL Note 1. Pin = 150% of Drive Requirement for 45W output @ 12.5V. Note 2. y = Mismatch stress factor - the electrical criterion established to verify the device resistance to load mismatch failure. The mismatch stress test is accomplished in a standard test fixture terminated in a 20:1 minimum load mismatch at all phase angles. .205 (5.18) E .405 (10.3) Min B .215 (5.48) .122 (3.1) Dia C E .155 (3.94) .500 (12.7) Dia .005 (0.15) .270 (6.85) .160 (4.06) .725 (18.43) .975 (24.78) |
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